Quantum Lifetime of Two-Dimensional Holes, J. P. Eisenstein, D. Syphers, L.N. Pfeiffer and K.W. West, Solid State Communications 143, pp. 365-368 (2007).
Inhomogeneous Strain Relaxation in Triple‑Barrier p‑Si/SiGe Nanostructures, C. D. Akyüz, H. T. Johnson, A. Zaslavsky, L. B. Freund, and D. A. Syphers , Physical Review B 60, 16597 (1999).
Inhomogeneous Strain in Individual Quantum Dots Probed by Transport Measurements, C. D. Akyüz, A. Zaslavsky, L. B. Freund, D. A. Syphers, and T. O. Sedgwick, Applied Physics Letters, 72, 1739, (1998) .
In-Plane Valence Band Nonparabolicity and Anisotropy in Strained SiGe Quantum Wells, A. Zaslavsky, T. P. Smith III, D. A. Grutzmacher, S. Y. Lin, T. O. Sedgwick, and D. A. Syphers, Phys. Rev. B 48, 15112 (1993).
Similarities between the Landau Spectra and Dispersion Relations in Si/Si1-xGex Quantum Wells Investigated by Magnetotunneling Spectroscopy, U. Gensser, V. P. Kesan, D. A. Syphers, T. P. Smith III, S. S. Iyer, and E. S. Yang, Appl. Phys. Lett. 63, 545 (1993).
Probing Band Structure Anisotropy using Angle-Resolved Magnetotunneling Spectroscopy, U. Gensser, V.P. Kesan, D.A. Syphers, T.P. Smith III, S.S. Iyer, and E. S. Yang, Physical Review Letters 67, 3828 (1991).
Comparisons of Edge State vs. Bulk Conduction in the Quantum Hall Regime, D. A. Syphers, J. H. Killoran, H. E. Brakewood and F. Reis, Surface Science 229, 37 (1990).
The High Temperature Behavior of the Fractional Quantum Hall Effect, J. E. Furneaux, D. A. Syphers, J. Poulin and B. F. Mason, Surface Science 229, 7 (1990).
Fractional Quantum Hall Effect with an Added Parallel Magnetic Field, J. E. Furneaux, D. A. Syphers and A. G. Swanson, Physical Review Letters 63, 1098 (1989).
The Fractional Quantum Hall Effect in a Tilted Magnetic Field, D. A. Syphers and J. E. Furneaux, Solid State Commun. 65, 1513 (1988).